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| Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = 30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 s Applications 4.10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor www..com q Control equipment q Switching power supply 15.00.3 3.00.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 2.60.1 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 30 3 6 20 50 2 150 -55 to +150 Unit V V A A mJ W C C 7 123 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 2A VDD = 200V, RL = 100 Conditions VDS = 640V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 3A, VGS = 0 730 VDS = 20V, VGS = 0, f = 1MHz 90 40 35 60 50 160 2.5 1.5 800 2 3.2 2.4 -1.6 5 4 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 100 60 2SK2129 PD Ta Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=2W) 30 VDD=50V ID=3A 25 EAS Tj Non repetitive pulse TC=25C 50 Drain current ID (A) 10 I DP ID t=100s 40 (1) 30 20 1 1ms 10ms DC 15 20 10 0.1 10 (2) 5 0.01 1 10 100 1000 0 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 www..com to source voltage V (V) Drain DS Ambient temperature Ta (C) Junction temperature Tj (C) ID VDS 4 VGS=15V 10V 6V 4 TC=25C 5 ID VGS 6 VDS=25V Vth TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) 3 5.5V TC=0C 3 25C 150C 100C Gate threshold voltage Vth (V) 10 12 4 2 5V 3 2 2 1 4.5V 50W 1 1 4V 0 0 10 20 30 40 50 60 0 0 2 4 6 8 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (C) VDS VGS Drain to source ON-resistance RDS(on) () 80 TC=25C 12 RDS(on) ID 3.0 | Yfs | ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=25C 2.5 Drain to source voltage VDS (V) 70 60 50 40 30 20 10 0 0 3A 0.75A 10 TC=150C 8 2.0 100C 6 25C 4 0C 2 1.5 ID=6A 1.0 0.5 1.5A 10 15 20 25 30 0 0 1 2 3 4 5 0 0 1 2 3 4 5 5 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C 2SK2129 VDS, VGS Qg 800 ID=3A 16 14 12 10 VDS 8 6 VGS 4 2 0 60 300 td(on), tr, tf, td(off) ID VDD=200V VGS=10V TC=25C Drain to source voltage VDS (V) Gate to source voltage VGS (V) 700 600 500 400 300 200 100 0 0 10 20 30 40 50 Switching time td(on),tr,tf,td(off) (ns) 250 1000 Ciss 200 100 Coss Crss 10 150 td(off) 100 tr tf td(on) 0 0 1 2 3 4 5 50 1 0 50 100 150 200 250 www..com to source voltage VDS (V) Drain Gate charge amount Qg (nC) Drain current ID (A) 3 |
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